unisonic technologies co., ltd 13005ba preliminary npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r201-089.a npn silicon power transistors ? description these devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220 v switchmode. ? features * v ceo(sus) = 800 v * reverse bias soa with inductive loads @ t c = 100 * inductive switching matrix 2 to 4 amp, 25 and 100 t c @ 3a, 100 is 180 ns (typ) * 800v blocking capability * soa and switching applications information ? applications * switching regulator?s, inverters * motor controls * solenoid/relay drivers * deflection circuits ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13005bal-t92-b 13005BAG-T92-B to-92 b c e tape box 13005bal-t92-k 13005bag-t92-k to-92 b c e bulk 13005bal-t92-r 13005bag-t92-r to-92 b c e tape reel ? marking information package marking to-92
13005ba preliminary npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-089.a ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo ( sus ) 400 v collector-emitter voltage (v be =0) v ces 800 v collector-base voltage v cbo 800 v emitter base voltage v ebo 9 v collector current continuous i c 3 a peak (1) i cm 8 a base current continuous i b 2 a peak (1) i bm 4 a emitter current continuous i e 6 a peak (1) i em 12 a power dissipation at t a =25 p d 1 w junction temperature t j -65 ~ +150 storage temperature range t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 150 /w junction to case jc 112 /w ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics (note 1) collector-emitter sustaining voltage v ceo ( sus ) i c =10ma , i b =0 800 v collector cutoff current i cbo v cbo =rated value, v be ( off ) =1.5v 1 ma v cbo =rated value, v be ( off ) =1.5v, t c =100 5 emitter cutoff current i ebo v eb =9v, i c =0 1 ma on characteristics (note 1) dc current gain h fe1 i c =0.5a, v ce =5v 15 50 h fe2 i c =1a, v ce =5v 10 60 h fe3 i c =2a, v ce =5v 8 40 collector-emitter satu ration voltage v ce(sat) i c =1a, i b =0.2a 0.5 v i c =2a, i b =0.5a 0.6 v i c =4a, i b =1a 1 v i c =2a, i b =0.5a, t a =100 1 v base-emitter satura tion voltage v be(sat) i c =1a, i b =0.2a 1.2 v i c =2a, i b =0.5a 1.6 v i c =2a, i b =0.5a, t c =100 1.5 v dynamic characteristics current-gain-bandwidth product f t i c =500ma, v ce =10v, f=1mhz 4 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 65 pf switching characteristics resistive load (table 1) delay time t d v cc =125v, i c =2a, i b1 =i b2 =0.4a, t p =25 s, duty cycle 1% 0.025 0.1 s rise time t r 0.3 0.7 s storage time t s 1.7 4 s fall time t f 0.4 0.9 s note: 1. pulse test: pulse width=5ms, duty cycle 10% note: 2. pulse test: p w =300 s, duty cycle 2%
13005ba preliminary npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-089.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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